Go Back   2018-2019 StudyChaCha > StudyChaCha Discussion Forum > General Topics




  #1  
Old January 18th, 2014, 12:10 PM
Unregistered
Guest
 
Posts: n/a
Default Model papers of ECIL

Here I am looking for the ECIL Graduate Engineer Trainee Exam Model Question Papers, kindly give me the same……….
Reply With Quote Quick reply to this message
Other Discussions related to this topic
Thread
ECIL Placement Papers Electronics
ECIL Sample Papers For GET
Past Years Papers of ECIL
ECIL GET ECE Discipline Papers
ECIL GET previous years papers of ECE branch
ECIL Model Question Paper in Computer Science/IT stream
ECIL Model Papers CSE
Ecil get exam model paper
ECIL Previous Year Papers
ECIL Exam Question papers
ECIL question paper model
ECIL Test Model Papers
ECIL model papers
ECIL Placement Papers Computer Science
ECIL Recruitment Papers
ECIL Get Previous Papers
ECIL Test Question papers
ECIL Placement Papers Get
ECIL Papers Exam
ECIL Written Test Papers






  #2  
Old January 18th, 2014, 01:14 PM
Super Moderator
 
Join Date: Jun 2013
Posts: 42,978
Default Re: Model papers of ECIL

As you are looking for the ECIL Graduate Engineer Trainee Exam Model Question Papers, I have uploaded a document file having the same. There are objective types of the questions available. I have taken following questions from the attachment:

19.A common LED is made up of
a) intrinsic semiconductor b) direct semiconductor c) degenerate semiconductor d) indirect semiconductor

20.When operating as a voltage regulator, the breakdown in a Zener diode occurs due to the
a) tunneling effect b) avalanche breakdown c) impact ionization d) excess heating of the junction.

21.If the common base DC current gain of a BJT is 0.98, its common emitter DC current gain is
a) 51 b) 49 c) 1 d) 0.02

22.Negative resistance characteristics is exhibited by a
a) Zener diode b) Schottky diode c) photo diode d) Tunnel diode

23.Let En and Ep, respectively, represent the effective Fermi levels for electrons and holes during current conduction in a semiconductor. For lasing to occur in a P-N junction of band-gap energy 1.2 eV, (En – Ep) should be
a) greater than 1.2eV b) less than 1.2eV c) equal to 1.1eV d) equal to 0.7eV

24.In a P-well fabrication process, the substrate is
a) N-type semiconductor and is used to build P-channel MOSFET
b) P-type semiconductor and is used to build P-channel MOSFET
c) N-type semiconductor and is used to build N-channel MOSFET
d) P-type semiconductor and is used to build N-channel MOSFET

Remaining questions are in the attachment, please click on it……..
__________________
Answered By StudyChaCha Member
Reply With Quote Quick reply to this message
Our Latest Videos
Sponsored Links






















Reply


Reply to this Question / Ask Another Question
Your Username: Click here to log in

Message:
Options

Forum Jump


All times are GMT +6.5. The time now is 02:30 PM.


Powered by vBulletin® Version 3.8.11
Copyright ©2000 - 2018, vBulletin Solutions Inc.
Search Engine Friendly URLs by vBSEO 3.6.0 PL2

1 2 3 4 5 6 7 8 9