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Old January 9th, 2014, 09:54 AM
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Join Date: Jun 2013
Default Re: GATE ECE Previous Paper

The Graduate Aptitude Test in Engineering is an all-India entrance examination for admission in the engineering courses offered by reputed engineering colleges situated in India ..

Here I am giving you question paper for the GATE ECE branch in a PDF file attached with it so you can get it easily..

Some questions are given below :
Q.3 In a baseband communications link, frequencies upto 3500 Hz are used for signaling. Using a
raised cosine pulse with 75% excess bandwidth and for no inter-symbol interference, the maximum
possible signaling rate in symbols per second is
(A) 1750 (B) 2625 (C) 4000 (D) 5250

The output Y of a 2-bit comparator is logic 1 whenever the 2-bit input A is greater than the 2-bit
input B. The number of combinations for which the output is logic 1, is
(A) 4 (B) 6 (C) 8 (D) 10


A source alphabet consists of N symbols with the probability of the first two symbols being the
same. A source encoder increases the probability of the first symbol by a small amount  and
decreases that of the second by  . After encoding, the entropy of the source
(A) increases (B) remains the same
(C) increases only if N = 2 (D) decreases


A transmission line with a characteristic impedance of 100 is used to match a 50 section to a
200 section. If the matching is to be done both at 429 MHz and 1 GHz, the length of the
transmission line can be approximately
(A) 82.5 cm (B) 1.05 m (C) 1.58 m (D) 1.75 m

A fair coin is tossed till a head appears for the first time. The probability that the number of
required tosses is odd, is
(A) 1/3 (B) 1/2 (C) 2/3 (D) ¾

Q.48 With 10 V dc connected at port A, the current drawn by 7  connected at port B is
(A) 3/7 A (B) 5/7 A (C) 1 A (D) 9/7 A

Q.49 For the same network, with 6 V dc connected at port A, 1  connected at port B draws 7/3 A.
If 8 V dc is connected to port A, the open circuit voltage at port B is
(A) 6 V (B) 7 V (C) 8 V (D) 9 V
Attached Files Available for Download
File Type: pdf GATE ECE paper.pdf (340.9 KB, 44 views)
File Type: pdf GATE ECE paper 1.pdf (1.17 MB, 43 views)
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  #3  
Old February 25th, 2015, 03:03 PM
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Join Date: Nov 2011
Default Re: GATE ECE Previous Paper

Graduate Aptitude Test in Engineering (GATE) is standardized test for admission in M.Tech course and for employment in PU as well.

As per your request, I am forwarding you some questions form GATE 2008 Electronics and communication.

The system of linear equations

4 x+ 2y = 7
2x +y = 6 has

(A) a unique solution
(B) no solution
(C) an infinite number of solutions
(D) exactly two distinct solutions


Which of the following is true?

(A) A silicon wafer heavily doped with boron is a p+ substrate
(B) A silicon wafer lightly doped with boron is a p+ substrate
(C) A silicon wafer heavily doped with arsenic is a p+ substrate
(D) A silicon wafer lightly doped with arsenic is a p+ substrate

A silicon wafer has 100 nm of oxide on it and is furnace at a temperature above
1000c C for further oxidation in dry oxygen. The oxidation rate

(A) is independent of current oxide thickness and temperature
(B) is independent of current oxide thickness but depends on temperature
(C) slows down as the oxide grows
(D) is zero as the existing oxide prevents further oxidation

Silicon is doped with boron to a concentration of 4 1017 # atoms cm3. Assume the
intrinsic carrier concentration of silicon to be 1 5 10 . 10 # / cm3 and the value of kT q/ to be 25 mV at 300 K. Compared to undopped silicon, the fermi level of doped
silicon

(A) goes down by 0.31 eV
(B) goes up by 0.13 eV
(C) goes down by 0.427 eV
(D) goes up by 0.427 eV

Consider the following assertions.

S1 : For Zener effect to occur, a very abrupt junction is required.
S2 : For quantum tunneling to occur, a very narrow energy barrier is required.

Which of the following is correct ?

(A) Only S2 is true
(B) S1 and S2 are both true but S2 is not a reason for S1
(C) S1 and S2 and are both true but S2 is not a reason for S1
(D) Both S1 and S2 are false

One end of a loss-less transmission line having the characteristic impedance of 75Ω
and length of 1 cm is short-circuited. At 3 GHz, the input impedance at the other
end of transmission line is

(A) 0
(B) Resistive
(C) Capacitive
(D) Inductive

A uniform plane wave in the free space is normally incident on an infinitely thick
dielectric slab (dielectric constant ε = 9). The magnitude of the reflection coefficient
is

(A) 0
(B) 0.3
(C) 0.5
(D) 0.8

At 20 GHz, the gain of a parabolic dish antenna of 1 meter and 70% efficiency is

(A) 15 dB
(B) 25 dB
(C) 35 dB
(D) 45 dB

Noise with double-sided power spectral density on K over all frequencies is passed
through a RC low pass filter with 3 dB cut-off frequency of fc . The noise power at
the filter output is

(A) K
(B) Kfc
(C) k f π c
(D) 3








For more questions, consider the attachment.
Attached Files Available for Download
File Type: pdf GATE 2008 EC solved paper.pdf (1.55 MB, 21 views)
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