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Hi buddy here I have come to get syllabus of WBUT university ES101 - Baisc Electrical & Electronics Engineering paper ,so can you here provide me ??
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As you are asking for syllabus of WBUT university ES101 - Baisc Electrical & Electronics Engineering paper so on your demand I am providing same : Basic Electrical and Electronics Engineering-ICode: ES101Contacts: 3L + 1T = 4 Credits: 4 Basic Electrical Engineering-I DC Network Theorem : Definition of electric circuit, network, linear circuit, non-linear circuit,bilateral circuit, unilateral circuit, Dependent source, Kirchhoff’s law, Principle of superposition.Source equivalence and conversion, Thevenin’s theorem, Norton Theorem, nodal analysis,mesh analysis, star-delta conversion. Maximum power transfer theorem with proof. 7L Electromagnetism : Biot-savart law, Ampere’s circuital law, field calculation using Biot-savart &ere’s circuital law. Magnetic circuits, Analogous quantities in magnetic and electric circuits,Faraday’s law, Self and mutual inductance. Energy stored in a magnetic field, B-H curve,Hysteretic and Eddy current losses, Lifting power of Electromagnet. 5L AC fundamental : Production of alternating voltage, waveforms, average and RMS values, peak factor, form factor, phase and phase difference, phasor representation of alternating quantities,phasor diagram, behavior of AC series , parallel and series parallel circuits, Power factor, Powerin AC circuit, Effect of frequency variation in RLC series and parallel circuits, Resonance in RLCseries and parallel circuit, Q factor, band width of resonant circuit. 9L Basic Electronics Engineering-I Recapitulation and Orientation lectures : 2L Module – 1: Semiconductors: 4LCrystalline material: Mechanical properties, Energy band theory, Fermi levels; Conductors,Semiconductors and Insulators: electrical properties, band diagrams. Semiconductors: intrinsicand extrinsic, energy band diagram, electrical conduction phenomenon, P-type and N-typesemiconductors, drift and diffusion carriers. Module – 2: Diodes and Diode Circuits : 3L+3L = 6LFormation of P-N junction, energy band diagram, built-in-potential forward and reverse biasedP-N junction, formation of depletion zone, V-I characteristics, Zener breakdown, Avalanchebreakdown and its reverse characteristics; Junction capacitance and Varactor diode.Simple diode circuits, load line, linear piecewise model; Rectifier circuits: half wave, full wave,PIV, DC voltage and current, ripple factor, efficiency, idea of regulation. Module – 3: Bipolar Junction Transistors : 6L+2L = 8LFormation of PNP / NPN junctions, energy band diagram; transistor mechanism and principle of transistors, CE, CB, CC configuration, transistor characteristics: cut-off active and saturationmode, transistor action, injection efficiency, base transport factor and current amplificationfactors for CB and CE modes.Biasing and Bias stability: calculation of stability factor
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