SSDC Question Papers of Pune University

Hi I would like to have the previous years question paper for the Solid State Devices and Circuits topic of the S.E. (E&TC/Electronics) (First Semester) Examination for University of Pune?

The previous years question paper for the Solid State Devices and Circuits topic of the S.E. (E&TC/Electronics) (First Semester) Examination for University of Pune is as given below:

SECTION I

1. (a) What are the important features of switching diodes ? Draw the characteristics of switching diode and mention two applications of switching diode. [8]
(b) Explain construction, operation and characteristics of photo-diode. [8]
Or

2. (a) Determine the output voltage Vo in the circuit shown for:
(i) 1 2 V V 10 V = =
(ii) V1
(iii) V2 . [9]
(b) List the factors affecting load line and Q pt. of a diode circuit. [4]
(c) Define the following non-ideal parameters of MOSFET:
(i) Body effect
(ii) Subthreshold conduction. [3]

3. (a) Derive the expression for the voltage gain, input resistance and output resistance for a CS MOSFET amplifier with the bypass capacitor. [8]
(b) Write a short note on Bi-CMOS inverter. [8]

Or
4. (a) What is enhancement load device ? Explain the circuit with enhancement load device and MOSFET driver. [8]
(b) Calculate VGS, VDS and ID for the Fig. 2, the MOSFET parameters are:
VTN = 0.8 V, Kn = 0.5 mA/V2. [8]

5. (a) Derive the expression for CE amplifier with bypassed RE using approximate analysis. [8]
(b) Explain the need of multistage amplifier and comment on selection of transistor configuration. [6]
(c) Compare CE, CB, CC configurations of transistor. [4]

Or

6. (a) The transistor amplifier shown in Fig. 3 assume hie = 1.1 K, hfe = 50, hre = 2.5 × 10–4, hoe = 24 µA/V. Calculate :
(i) AI = IO/Iin
(ii) AV
(iii)
(iv) Ri [8]
(b) For the two-stage amplifier circuit shown in Fig. 4, identify the configurations. Assuming transistor parameters as hie = 2K, hfe = 50, hre = 6 × 10–4, hoe = 25 µA/V. Calculate overall current gain AI, voltage gain AV, S V A , Ri, Ro'.
hic = 2K, hfc = –51, hrc = 1, hoc = 25 µA/V. [10]

SECTION II

7. (a) Explain the effect of various capacitors listed below on frequency
response of an amplifier :
(i) Coupling capacitor
(ii) Emitter or source bypass capacitor
(iii) Junction capacitance
List the advantages of square wave testing. [8]
(b) Write a short note on Heterojunction bipolar transistor. [8]

Or

8. (a) Draw the hybrid π common emitter BJT model and explain the parameters in the model. [8]
(b) Explain the operation of optocoupler. State and explain application of optocoupler. [8]

9. (a) For the feedback amplifier shown in Fig. 5 identify feedback topology with proper justification. The transistor used has the following parameters :
hfe = 200, hie = 2 K, hre = 10–4, hoe = 10–6 A/V. Calculate Avf,
Rif, Rof'. [8]
(b) For the transistor shown in Fig. 6 the transistor has the following parameters : hie = 1.1 K, hfe = 50, hre = hoe = 0. Calculate Avf, Rif', Rof'. [8]

Or

10. (a) Write short notes on any two :
(i) Crystal oscillator
(ii) Hartley oscillator
(iii) Wien Bridge oscillator. [8]
(b) What are four basic amplifier types ? Explain with the help of block diagram. What are desirable characteristics of four basic amplifiers ? [8]

11. (a) Explain the following parameters of power BJT :
(i) Tj max
(ii) SOA
(iii) θjc
(iv) PD, max. [8]
(b) Draw the circuit diagram of class B push-pull power amplifier and discuss in brief:
(i) its operation
(ii) its merits
(iii) crossover distortion. [10]

Or

12. (a) Compare power BJT with simple BJT. Draw the IV characteristics
of power transistor and explain. [9]
(b) Explain how even harmonics get eliminated in class B push-
pull amplifier. [9]

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Answered By StudyChaCha Member