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Old July 28th, 2015, 12:52 PM
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Default Re: PGECET Model Papers Free Download For EEE

As you want I am here giving you model question paper of AP PGECET exam for electronic and electrical engineering branch.

Sample paper :
Epitaxial growth is used in integrated circuit
(A) because it produces low parasitic capacitance
(B) because it yields back-to-back isolating junctions
(C) to grow single crystal n -doped silicon on a single-crystal p -type substrate
(D) to grow selectively single-crystal p -doped silicon of one resistivity on p -type substrate of a
different resistivity.


The chemical reaction involved in epitaxial growth in IC chips takes place at a temperature of about
(A) 500° C (B) 800° C
(C) 1200° C (D) 2000° C


Assertion (A) In the self bias CE transistor amplifier a single battery is used.
Reason (R) The collector base junction is forward biased by VCC .
Chose the correct option:
(A) Both A and R individually true and R is the correct explanation of A.
(B) Both A and R individually true and but R is not the correct explanation of A.
(C) A is true but R is false
(D) A is false


The address bus width of a memory of size 1024 ´ 8 bits is
(A) 10 bits (B) 13 bits
(C) 8 bits (D) 18 bits


In TDM non essential frequency components of the modulating signal are removed by
(A) sampler (B) attenuator
(C) pre-alias filter (C) modulator
Q18. Coherent demodulation of FSK signal can be affected using
(A) correlation receiver (B) bandpass filter and envelope detectors
(C) discriminator detection (C) above all


Two dissimilar antennas having their maximum directivities equal,
(A) must have their beamwidths also equal.
(B) can not have their beamwidths equal because they are dissimilar antenna.
(C) may not necessarily have their maximum power gain equal.
(D) must have their effective aperture areas ( capture areas) also equal.


AP PGECET exam EEE paper








Here is the attachment.
Attached Files Available for Download
File Type: pdf AP PGECET exam EEE paper.pdf (482.7 KB, 45 views)
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