GATE previous papers solutions free download

I have submitted application form for GATE ECE exam so I need old papers of the exam for preparation. Would you please tell me from where I can download the papers free of cost?

Here is some questions of GATE previous year question paper:







Rest of questions is available in question paper which I am providing you free of cost and you can free download.

Attached Files Available for Download

GATE ECE question paper.pdf (328.1 KB, 126 views)

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Could you please send me Gate 2009 CSE paper with solution

Here I am giving you question paper for the electronic and communication engineering branch of GATE examination in PDF files attached with it ..

Some content of PDF is given below :

A bulb in a staircase has two switches, one switch being
at the ground floor and the other one at the fi rst floor. The
bulb can be turned ON and also can be turned OFF by
any one of the swi tches ir respective of the state of the
other switch. The logic of switching of the bulb resembles

(a) an AND gate (b) an OR gate
(c) an XOR gate (d) a NAND gate

3. Two systems wi th impulse responses h1(t) and h2 (t)
are connected in cascade. Then the overal l impulse
response of the cascaded system is given by
(a) product of h1(t) and h2(t)
(b) sum of h1(t) and h2(t)
(c) convolut ion of h1(t) and h2(t)
(d) subt ract ion of h2(t) from h1(t)

4. In a forward biased pn junct ion diode, the sequence of
events that best descr ibes the mechanism of cur rent
flow is
(a) i n ject i on, and subsequ en t di f fusi on an d
recombinat ion of minor i ty car r iers
(b) inject ion, and subsequent dr i ft and generat ion of
minor i ty car r iers
(c) ext ract ion, and subsequent di ffusion and generat ion
of minor i ty car r iers
(d) extract ion, and subsequent dr ift and recombination
of minor i ty car r iers

5. In IC technology, dry oxidat ion (using dry oxygen) as
compared to wet oxidat ion (using steam or water vapor )
produces
(a) super ior qual i ty oxide wi th a higher growth rate
(b) infer ior qual i ty oxide wi th a higher growth rate
(c) infer ior qual i ty oxide wi th a lower growth rate
(d) super ior qual i ty oxide wi th a lower growth rate

6. The maximum value of  unti l which the approximat ion
sin  0 holds to wi thin 10% er ror is
(a) 10 (b) 18
(c) 50 (d) 90

12. For 8085 mi croprocessor, the fol lowing program i s
executed.
MVI A, 05H;
MVI B, 05H;
PTR: ADD B;
DCR B;
JNZ PTR;
ADI 03H;
HLT;
At the end of program, accumulator contains
(a) 17H (b) 20H
(c) 23H (d) 05H

13. The bi t rate of a digi tal communi cat ion system i s
R kbits/s. The modulation used is 32-QAM. The minimum
bandwidth requi red for ISI free t ransmission is
(a) R/ 10 Hz (b) R/ 10 kHz
(c) R/ 5 Hz (d) R/ 5 kHz

14. For a per iodic signal v(t) = 30 sin 100t + 10 cos 300 t + 6
sin (500t + /4), the fundamental frequency in rad/s is
(a) 100 (b) 300
(c) 500 (d) 1500

16. A band-l imi ted signal wi th a maximum frequency of
5kHz is to be sampled. According to the sampl ing
theorem, the sampl ing frequency which is not val id is
(a) 5 kHz
(b) 12 kHz
(c) 15 kHz
(d) 20 kHz

17. In a MOSFET operat ing in the saturat ion region, the
channel length modulat ion effect causes
(a) an increase in the gate-source capaci tance
(b) a decrease in the t ransconductance
(c) a decrease in the uni ty-gain cutoff frequency
(d) a decrease in the output resistance

56. Choose the grammat ical ly CORRECT sentence:
(a) Two and two add four.
(b) Two and two become four.
(c) Two and two are four.
(d) Two and two make four.

57. St at ement : You can always give me a r ing whenever
you need.
Which one of the fol lowing is the best inference from
the above statement?
(a) Because I have a nice cal ler tune.
(b) Because I have a bet ter telephone faci l i ty.
(c) Because a fr iend in need is a fr iend indeed.
(d) Because you need not pay towards the telephone
bi l ls when you give me a r ing.

Attached Files Available for Download

GATE ECE paper with answer.pdf (695.5 KB, 24 views)