BSC Electronics Syllabus Osmania University

I am the student of BSC Electronics at Osmania University
And my exams will near and I am also prepair for that but I don’t have any idea about syllabus so can you provide me the syllabus of
My exams and also provide me a website to download them?

As per your need I am providing you the B.sc 3rd yr Electronics syllabus of Osmania University. With the help of this syllabus you can prepare better for the exam. This syllabus provide you how much content you have to study for the exam. It also suggests the books from which you have to study. Given below is the link of the file.

osmania.ac.in/Electronics.pdf

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Answered By StudyChaCha Member

Hello sir please provide me syllabus for BSC Electronics for Osmania University.

The Osmania University is a public state university founded in 1918. Here is the complete syllabus for BSC Electronics Osmania University

PAPER-I Circuit Analysis and Electronic Devices

(120 hours)
UNIT-I (30 hours)

AC Fundamentals: The Sine wave –Average and RMS values–The J operator – Polar and rectangular forms of complex numbers – Phasor diagram – Complex impedance and admittance.

Passive networks: Concept of voltage and current sources – KVL and KCL- Application to simple circuits (AC and DC) consisting of resistors and sources (one or two) - Node voltage analysis and method of mesh currents.

Network theorems (DC and AC): Superposition Theorem–Thevenin's Theorem– Norton's Theorem–Maximum power transfer Theorem–Millman Theorem- Reciprocity Theorem – Application to simple networks.
UNIT- II (30 hours)

RC and RL Circuits: Transient response of RL and RC circuits with step input– time constants. Frequency response of RC and RL circuits – Types of Filters: Low pass filter – High pass filter – frequency response - Passive differentiating and integrating circuits.

Resonance: Series resonance and parallel resonance RLC circuits – Resonant frequency – Q factor – Band width – Selectivity.
UNIT-III (30 hours)

PN Junction: Depletion region – Junction capacitance – Diode equation (no derivation) – Effect of temperature on reverse saturation current. Construction, working, V-I characteristics and simple applications of

i) Junction diode ii) Zener diode iii) Tunnel diode and iv) Varactor diode.

Bipolar Junction Transistor (BJT): PNP and NPN transistors–current components in BJT – BJT static characteristics (Input and Output) – Early effect- CB, CC,CE configurations (cut off, active, and saturation regions) CE configuration as two port network – h-parameters – h-parameter equivalent circuit. Experimental arrangement to study input and output characteristics of BJT in CE configuration. Determination of h-parameters from the characteristics. Biasing and load line analysis – Fixed bias and self bias arrangement.
UNIT-IV (30 hours)

Field Effect Transistor (FET): Structure and working of JFET and MOSFET – output and transfer characteristics – Experimental arrangement for studying the characteristics and to determine FET parameters. Application of FET as voltage variable resistor and MOSFET as a switch – Advantages of FET over transistor.

Uni Junction Transistor (UJT): Structure and working of UJT- Characteristics. Application of UJT as a relaxation oscillator.

Silicon Controlled Rectifier (SCR): Structure and working of SCR. Two transistor representation, Characteristics of SCR. Experimental set up to study the SCR characteristics. Application of SCR for power control.

Photo Electric Devices: Structure and operation of LDR, Photo voltaic cell, Photo diode, Photo transistors and LED.

PRACTICALS PAPER-I (90 hours-30 Sessions)
Circuit Analysis and Electronic devices Lab

1. Measurement of peak voltage, frequency and phase using CRO.

2. Thevenin's theorem – verification.

3. Norton's theorem – verification.

4. Maximum power transfer theorem – verification.

5. CR and LRcircuits- Frequency response- (Low pass and High pass).

6. CR and LR circuits - Differentiation and integration - tracing of waveforms.

7. LCR–Series resonance circuit–Frequency response–Determination of fo, Q and band width.

8. To draw volt-ampere characteristics of Junction diode and determine the cut-in voltage, forward and reverse resistances.

9. Zener diode V-I Characteristics– Determination of Zener breakdown voltage.

10. Voltage regulator using Zener diode

11. BJT input and output characteristics (CE configuration) and determination of ‘h' parameters.

12. FET –Characteristics and determination of FET parameters.

13. UJT –(i) V-I Characteristics, (ii) relaxation oscillator

14. LDR- characteristics.

15. SCR Volt-ampere characteristics.