IES Question Paper for ECE stream

Will you provide the IES question paper for Elecronics and Communication stream?

Indian Engineering Service (IES) Exam Pattern consists of written examination and personality test or personal interview (PI).
The written examination will consist the following two sections:
Section I – objective types questions
Section II conventional (essay) type questions papers.
Both Sections of the written examination of IES Exam will cover the entire syllabus of the relevant engineering subject from Civil / Mechanical / Electrical / Electronic and Telecommunication Engineering.

Few questions of Elecronics and Communication stream for IES is given below:
The I-V characteristics of a tunnel diode exhibit
(a) current-controlled negative resistance
(b) voltage-controlled negative resistance
(c) temperature-controlled positive resistance
(d) current-controlled positive resistance

A gate to drain-connected enhancement mode MOSFET is an example
(a) an active load
(b) a switching device
(c) a three-terminal device
(d) a three-terminal device

Thermal runway is not possible in FET because, as the temperature
(a) the drain current increases
(b) the mobility increases
(c) the mobility decreases
(d) the transconductance increases

The output impedance of a BJT under common-collector configuration
(a) low
(b) high
(c) medium

Consider the following statements related to JFET:
1. Its operation depends on the flow of minority carriers only.
2. It is less noisy than BJT
3. It has poor thermal stability
4. It is relatively immune to radiation
The correct statements are
(a) 1, 2, 3 and 4
(b) 1 and 2 only
(c) 2 and 4 only
(d) 3 and 4 only

Consider the following statements:
1. Speed of operation of MOSFET is more than the speed of operation of SCR
2. SCRs have lower power loss than MOSFETs.
3. The current in conducting state can easily be controlled through the gate in SCR.
4. MOSFET is not a current triggered device.
The correct statements are
(a) 1 and 4 only
(b) 1 and 2 only
(c) 2 and 3 only
(d) 1, 2, 3 and 4

08. Match List-I with List-II and select the correct answer using the code given below the
Lists:
List – I List – II
A. di / dt rating limits 1. Snubber circuit
B. dv / dt rating 2. Heat sink
C. i2t limit 3. Series reactor
D. Junction temperature limit 4. Fuse
Codes:
A B C D A B C D
(a) 2 4 1 3 (b) 3 4 1 2
(c) 2 1 4 3 (d) 3 1 4 2
Ans : (d)

09. An SCR can be turned off
(a) by passing a negative pulse to its gate
(b) by removing the gate supply
(c) by reverse biasing it
(d) by forcing the current through gate to become zero
Ans : (c)

10. Body effect in MOSFETs results in
(a) increase in the value of transconductance
(b) change in the value of threshold voltage
(c) decrease in the value of transconductance
(d) increase in the value of output resistance
Ans : (b)

11. The efficiency of an LED for generating light is directly proportional to the
(a) applied voltage (b) current injected
(c) temperature (d) level of doping
Ans : (b)

12. A signal f(t) is described as
f(t) = [1-|t|] when | t | 1
= 0 when | t | > 1
This represents the unit
(a) sinc function (b) area triangular function
(c) signum function (d) parabolic function
Ans : (b)

For more questions,here I am giving attachment

Attached Files Available for Download

IES Question Paper ECE stream.pdf (211.3 KB, 48 views)

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Answered By StudyChaCha Member