GATE model question papers for ECE with answers free download

#51 October 14th, 2013, 01:17 PM

Quote:

Originally Posted by nagamani surabathuni

gate exam 3 years question papers

sent me last 3 years question with answer sir

Aakashd · #52 December 14th, 2013, 10:30 AM

as you are looking for the question paper for the GATE ECE examination with answers so here I am giving you question paper for It in PDF files attached with it .

some content of PDF is given below :

A bulb in a staircase has two switches, one switch being at the ground floor
and the other one at the first floor. The bulb can be turned ON and also can
be turned OFF by any one of the switches irrespective of the state of the
other switch. The logic of switching of the bulb resembles
(A) an AND gate (B) an OR gate (C) an XOR gate (D) a NAND gate

Answer: (C)

4. In a forward biased pn junction diode, the sequence of events that best describes
the mechanism of current flow is
(A) injection, and subsequent diffusion and recombination of minority carriers
(B) injection, and subsequent drift and generation of minority carriers
(C) extraction, and subsequent diffusion and generation of minority carriers
(D) extraction, and subsequent drift and recombination of minority carriers
Answer: (A)

5. In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation
(using steam or water vapor) produces
(A) superior quality oxide with a higher growth rate
(B) inferior quality oxide with a higher growth rate
(C) inferior quality oxide with a lower growth rate
(D) superior quality oxide with a lower growth rate
Answer: (D)

12. For 8085 microprocessor, the following program is executed
MVI A, 05H;
MVIB, 05H;
PTR: ADD B;
DCR B;
JNZ PTR;
ADI 03H;
HLT;
At the end of program, accumulator contains
(A) 17 H (B) 20 H (C) 23 H (D) 05 H

Answer: (A)
Exp: Accumulator changes as follows (05 + 05 + 04 +03 +02 +01)H
At the end of Loop accumulator contains = 14H
ADI O3H ®A=(14+03)=17H

13. The bit rate of a digital communication system is R kbits/s. The modulation used is
32-QAM. The minimum bandwidth required for ISI free transmission is
(A) R/10 Hz (B) R/10 kHz (C) R/5 Hz (D) R/5 kHz

In a MOSFET operating in the saturation region, the channel length modulation
effect causes
(A) an increase in the gate-source capacitance
(B) a decrease in the Transconductance
(C) a decrease in the unity-gain cutoff frequency
(D) a decrease in the output resistance
Answer: (D)

Aakashd · #53 December 17th, 2013, 01:28 PM

The eligibility for appearing in GATE is Bachelor’s degree holders in Engineering/ Technology/ Architecture (4 years after 10+2/ Post-B.Sc./ Post-Diploma) and those who are in the final year of such programs.

Model Papers for ECE:

Here I am providing you GATE Model Papers for ECE:

Here I am providing you few questions from the model paper:

Q.1 A bulb in a staircase has two switches, one switch being at the ground floor and the other one at the
first floor. The bulb can be turned ON and also can be turned OFF by any one of the switches
irrespective of the state of the other switch. The logic of switching of the bulb resembles
(A) an AND gate (B) an OR gate (C) an XOR gate (D) a NAND gate
Q.3 Two systems with impulse responses 1( ) h t and 2 ( ) h t are connected in cascade. Then the overall
impulse response of the cascaded system is given by
(A) product of 1( ) h t and 2 ( ) h t
(B) sum of 1( ) h t and 2 ( ) h t
(C) convolution of 1( ) h t and 2 ( ) h t
(D) subtraction of 2 ( ) h t from 1( ) h t
Q.4 In a forward biased pn junction diode, the sequence of events that best describes the mechanism of
current flow is
(A) injection, and subsequent diffusion and recombination of minority carriers
(B) injection, and subsequent drift and generation of minority carriers
(C) extraction, and subsequent diffusion and generation of minority carriers
(D) extraction, and subsequent drift and recombination of minority carriers
Q.5 In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or
water vapor) produces
(A) superior quality oxide with a higher growth rate
(B) inferior quality oxide with a higher growth rate
(C) inferior quality oxide with a lower growth rate
(D) superior quality oxide with a lower growth rate

Aakashd · #54 December 18th, 2013, 02:14 PM

Here I am giving you question paper for the electronic and communication engineering branch of GATE examination ..

In a baseband communications link, frequencies upto 3500 Hz are used for signaling. Using a
raised cosine pulse with 75% excess bandwidth and for no inter-symbol interference, the maximum
possible signaling rate in symbols per second is
(A) 1750 (B) 2625 (C) 4000 (D) 5250

The electric field of a uniform plane electromagnetic wave in free space, along the positive
x direction, is given by   x j
z y e a j a E 25 ˆ ˆ 10   

. The frequency and polarization of the wave,
respectively, are
(A) 1.2 GHz and left circular (B) 4 Hz and left circular
(C) 1.2 GHz and right circular (D) 4 Hz and right circular

The output Y of a 2-bit comparator is logic 1 whenever the 2-bit input A is greater than the 2-bit
input B. The number of combinations for which the output is logic 1, is
(A) 4 (B) 6 (C) 8 (D) 10

A source alphabet consists of N symbols with the probability of the first two symbols being the
same. A source encoder increases the probability of the first symbol by a small amount  and
decreases that of the second by  . After encoding, the entropy of the source
(A) increases (B) remains the same
(C) increases only if N = 2 (D) decreases

A transmission line with a characteristic impedance of 100 is used to match a 50 section to a
200 section. If the matching is to be done both at 429 MHz and 1 GHz, the length of the
transmission line can be approximately
(A) 82.5 cm (B) 1.05 m (C) 1.58 m (D) 1.75 m

A binary symmetric channel (BSC) has a transition probability of 1/8. If the binary transmit symbol
X is such that P(X=0) = 9/10, then the probability of error for an optimum receiver will be
(A) 7/80 (B) 63/80 (C) 9/10 (D) 1/10

With 10 V dc connected at port A, the current drawn by 7  connected at port B is
(A) 3/7 A (B) 5/7 A (C) 1 A (D) 9/7 A

Q.49 For the same network, with 6 V dc connected at port A, 1  connected at port B draws 7/3 A.
If 8 V dc is connected to port A, the open circuit voltage at port B is
(A) 6 V (B) 7 V (C) 8 V (D) 9 V

For more questions I am attaching PDF files with it so you can get it easily..

shabanasweety · #55 January 30th, 2014, 02:22 PM

Quote:

Originally Posted by venkatesh01992

please provide a practice papers for gate(ece).

plz send ma previous gate qustion papers of last 10 years with solved

#56 March 11th, 2014, 03:02 PM

Will you please provide the ECE question paper of the GATE exam?

Sashwat · #57 March 11th, 2014, 03:16 PM

As you are looking for the ECE question paper of the GATE exam , here i am providing the list of few questions.
1. A bulb in a staircase has two switches, one switch being at the ground floor
and the other one at the first floor. The bulb can be turned ON and also can
be turned OFF by any one of the switches irrespective of the state of the
other switch. The logic of switching of the bulb resembles
(A) an AND gate
(B) an OR gate
(C) an XOR gate
(D) a NAND gate

13. The bit rate of a digital communication system is R kbits/s. The modulation used is
32-QAM. The minimum bandwidth required for ISI free transmission is
(A) R/10 Hz
(B) R/10 kHz
(C) R/5 Hz
(D) R/5 kHz

17. In a MOSFET operating in the saturation region, the channel length modulation
effect causes
(A) an increase in the gate-source capacitance
(B) a decrease in the Transconductance
(C) a decrease in the unity-gain cutoff frequency
(D) a decrease in the output resistance

4. In a forward biased pn junction diode, the sequence of events that best describes
the mechanism of current flow is
(A) injection, and subsequent diffusion and recombination of minority carriers
(B) injection, and subsequent drift and generation of minority carriers
(C) extraction, and subsequent diffusion and generation of minority carriers
(D) extraction, and subsequent drift and recombination of minority carriers

5. In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation
(using steam or water vapor) produces
(A) superior quality oxide with a higher growth rate
(B) inferior quality oxide with a higher growth rate
(C) inferior quality oxide with a lower growth rate
(D) superior quality oxide with a lower growth rate

For more questions ,here i am giving attachment

#58 August 2nd, 2014, 12:03 PM

i want take gate exam. papers of last 10th years

goddse · #59 March 23rd, 2015, 01:22 PM

plz send m previous year sample paper of ece at shiwani.chadha@gmail.com