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  #1  
Old April 26th, 2012, 07:23 PM
emmanuel
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Default GATE Papers Organized By IIT Delhi

Hello I am taking part in the Gate exam of IIT Delhi and for that reason I need the gate papers so please can you give me the gate papers of IIT Delhi and tell me from where can I download the papers?
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  #2  
Old March 4th, 2014, 10:46 AM
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Default Re: GATE Papers Organized By IIT Delhi

Will you please provide the ECE question paper of the GATE exam?
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Old March 4th, 2014, 10:52 AM
Sashwat's Avatar
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Default Re: GATE Papers Organized By IIT Delhi

As you are looking for the ECE question paper of the GATE exam , here i am providing the list of few questions.

1. A bulb in a staircase has two switches, one switch being at the ground floor
and the other one at the first floor. The bulb can be turned ON and also can
be turned OFF by any one of the switches irrespective of the state of the
other switch. The logic of switching of the bulb resembles
(A) an AND gate
(B) an OR gate
(C) an XOR gate
(D) a NAND gate

4. In a forward biased pn junction diode, the sequence of events that best describes
the mechanism of current flow is
(A) injection, and subsequent diffusion and recombination of minority carriers
(B) injection, and subsequent drift and generation of minority carriers
(C) extraction, and subsequent diffusion and generation of minority carriers
(D) extraction, and subsequent drift and recombination of minority carriers

5. In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation
(using steam or water vapor) produces
(A) superior quality oxide with a higher growth rate
(B) inferior quality oxide with a higher growth rate
(C) inferior quality oxide with a lower growth rate
(D) superior quality oxide with a lower growth rate

13. The bit rate of a digital communication system is R kbits/s. The modulation used is
32-QAM. The minimum bandwidth required for ISI free transmission is
(A) R/10 Hz
(B) R/10 kHz
(C) R/5 Hz
(D) R/5 kHz

17. In a MOSFET operating in the saturation region, the channel length modulation
effect causes
(A) an increase in the gate-source capacitance
(B) a decrease in the Transconductance
(C) a decrease in the unity-gain cutoff frequency
(D) a decrease in the output resistance









For more questions ,here i am giving attachment
Attached Files Available for Download
File Type: pdf GATE ECE Question Papers.pdf (331.8 KB, 38 views)
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