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#1
 Super Moderator Join Date: Nov 2011 Will you please give me the previous year question papers of GATE Exam for Electronics and Communication Engineering as it is very urgent for me?

As you want to get the previous year question papers of GATE Exam for Electronics and Communication Engineering so here is the information of the same for you:

Previous year question papers of GATE Exam for Electronics and Communication Engineering      Previous year question papers of GATE Exam for Electronics and Communication Engineering.pdf (448.9 KB, 54 views) Previous year question papers of GATE Exam for Electronics and Communication Engineering-1.pdf (215.4 KB, 46 views)

Last edited by Sashwat; July 4th, 2019 at 09:58 AM.

#2
 Super Moderator Join Date: Dec 2011 Re: Previous year question papers of GATE Exam for Electronics and Communication Engi

As per your need, I am giving you 2011 question paper of the GATE Electronics and Communication engineering.

The trigonometric Fourier series of an even function does not have the
(A) dc term
(B) cosine terms
(C) sine terms
(D) odd harmonic terms

A silicon PN junction is forward biased with a constant current at room temperature.
When the temperature is increased by 10 C, the forward bias voltage across the PN
junction

(A) increases by 60mV
(B) decreases by 60mV
(C) increases by 25mV
(D) decreases by 25mV

An analog signal is band-limited to 4 kHz, sampled at the Nyquist rate and the samples are quantized into 4 levels. The quantized levels are assumed to be independent and equally probable. If we transmit two quantized samples per second,the information rate is

(A) 1 bits / second
(B) 2 bits / second
(C) 3 bits / second
(D) 4 bits / second

Drift current in the semiconductors depends upon
(A) only the electric field
(B) only the carrier concentration gradient
(C) both the electric field and the carrier concentration
(D) both the electric field and the carrier concentration gradient

A Zener diode, when used in voltage stabilization circuits, is biased in
(A) reverse bias region below the breakdown voltage
(B) reverse breakdown region
(C) forward bias region
(D) forward bias constant current mode

An 8085 assembly language program is given
below. Assume that the carry flag is initially unset. The content of the accumulator after the execution of the program is
MVI A, 07H
RLC
MOV B, A
RLC
RLC
RRC
(A) 8CH
(B) 64H
(C) 23H
(D) 15H

The channel resistance when VGS = 0 V is
(A) 480
(B) 600
(C) 750
(D) 1000

The channel
(A) 360
(B) 917
(C) 1000
(D) 3000

For complete question paper, consider the attachment.

GATE ECE 2011 solved paper     GATE ECE 2011 solved paper.pdf (469.0 KB, 26 views)
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