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#1
April 23rd, 2012, 04:34 PM
 Ramkumar B. Guest Posts: n/a
GATE previous question papers for ECE

Hi buddy I would to like admission in M.tech Electronics and Communication Engineering (ECE) program at Indian institute of technology, so for do it I have applied for GATE entrance exam and now I need previous year question paper for preparation of this exam, can I get it from Indian institute of technology website?
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#2
October 14th, 2012, 12:36 AM
 Unregistered Guest Posts: n/a
Re: GATE previous question papers for ECE

study material of RK Kanodia is excellent. Read all books of kanodia.

#3
June 12th, 2013, 09:51 AM
 P.SARAVANAN Junior Member Join Date: Jun 2013 Posts: 1
Re: GATE previous question papers for ECE

Hi Sir, iam studying eee. I have model gate exam books with sollution.
#4
December 18th, 2013, 02:49 PM
 Aakashd Super Moderator Join Date: Jun 2013 Posts: 42,978
Re: GATE previous question papers for ECE

Here I am giving you question paper for the electronic and communication engineering branch of GATE examination in PDF files attached with it ..

Some content of PDF is given below :

A bulb in a staircase has two switches, one switch being
at the ground floor and the other one at the fi rst floor. The
bulb can be turned ON and also can be turned OFF by
any one of the swi tches ir respective of the state of the
other switch. The logic of switching of the bulb resembles

(a) an AND gate (b) an OR gate
(c) an XOR gate (d) a NAND gate

3. Two systems wi th impulse responses h1(t) and h2 (t)
are connected in cascade. Then the overal l impulse
response of the cascaded system is given by
(a) product of h1(t) and h2(t)
(b) sum of h1(t) and h2(t)
(c) convolut ion of h1(t) and h2(t)
(d) subt ract ion of h2(t) from h1(t)

4. In a forward biased pn junct ion diode, the sequence of
events that best descr ibes the mechanism of cur rent
flow is
(a) i n ject i on, and subsequ en t di f fusi on an d
recombinat ion of minor i ty car r iers
(b) inject ion, and subsequent dr i ft and generat ion of
minor i ty car r iers
(c) ext ract ion, and subsequent di ffusion and generat ion
of minor i ty car r iers
(d) extract ion, and subsequent dr ift and recombination
of minor i ty car r iers

5. In IC technology, dry oxidat ion (using dry oxygen) as
compared to wet oxidat ion (using steam or water vapor )
produces
(a) super ior qual i ty oxide wi th a higher growth rate
(b) infer ior qual i ty oxide wi th a higher growth rate
(c) infer ior qual i ty oxide wi th a lower growth rate
(d) super ior qual i ty oxide wi th a lower growth rate

6. The maximum value of  unti l which the approximat ion
sin  0 holds to wi thin 10% er ror is
(a) 10 (b) 18
(c) 50 (d) 90

12. For 8085 mi croprocessor, the fol lowing program i s
executed.
MVI A, 05H;
MVI B, 05H;
DCR B;
JNZ PTR;
HLT;
At the end of program, accumulator contains
(a) 17H (b) 20H
(c) 23H (d) 05H

13. The bi t rate of a digi tal communi cat ion system i s
R kbits/s. The modulation used is 32-QAM. The minimum
bandwidth requi red for ISI free t ransmission is
(a) R/ 10 Hz (b) R/ 10 kHz
(c) R/ 5 Hz (d) R/ 5 kHz

14. For a per iodic signal v(t) = 30 sin 100t + 10 cos 300 t + 6
sin (500t + /4), the fundamental frequency in rad/s is
(a) 100 (b) 300
(c) 500 (d) 1500
Attached Files
 GATE ECE paper.pdf (340.9 KB, 19 views) GATE ECE paper with answer.pdf (695.5 KB, 32 views) GATE ECE paper 1.pdf (328.3 KB, 31 views)

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