Semiconductor devices v-i characteristics

Hello I am looking for Optoelectronic Semiconductor Devices - Principals and Characteristics.So can you provide me any notes on this topic ?

The Semiconductor Devices V-I Characteristics of Berkeley Lab - Lawrence Berkeley National Laboratory which is a US Department of Energy is as follows:

VI. Semiconductor Devices and Microelectronics

1. Bipolar Transistors Bipolar transistors in amplifiers

2. Field Effect Transistors Junction Field Effect Transistors (JFETs)
Metal Oxide Semiconductor FETs (MOSFETs) MOSFETs in amplifiers

3. Noise in Transistors Noise in Field Effect Transistors Optimization of Device Geometry Noise in Bipolar Transistors Noise Optimization – Capacitive Matching
Optimization for Low Power

4. Microelectronics Fabrication of Semiconductor Devices Integrated Circuits

Semiconductor Devices V-I Characteristics







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University of California, Berkeley
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As you want notes on Optoelectronic Semiconductor Devices - Principals and Characteristics. So here I am providing you that :
IV-VI SEMICONDUCTORS
The band-gaps of IV-VI semiconductors are very narrow and the emission wavelengths are long. Eg can be tuned over a wide range by controlling the temperature of, the pressure on, or the magnetic fields applied to the semiconductor.
Tunable semiconductor light sources based on these materials are useful for high-resolution spectroscopy applications.
Most light-emitting IV-VI semiconductor devices operate at cryogenic temperatures, typically 50°K.
Stable IV-VI crystals exist in various stoichiometric compositions. They have an interesting property: excess Pb atoms in PbSe act as electron donors, and excess Se atoms act as electron acceptors. By simply changing the proportional composition, we can change a IV-VI semiconductor from n-type to a p-type.

2.3 BASIC SEMICONDUCTOR LUMINESCENT DIODE STRUCTURES

The heart of the semiconductor luminescent diode is an active semiconducting layer, which is sandwiched between two cladding layers. There are two junctions, one on each side of the active layer. In order for the gain material in a semiconductor laser to function, it must be pumped or excited with some external energy source.

A major attribute of diode lasers is their ability to be pumped directly with an electrical current. Of course, the active material can also be exited by the carriers generated from absorbed light, and this process is important in characterizing semiconductor material before electrical contacts are made.

The first ILDs and LEDs were homojunction diodes. Most modern electro luminescent diodes have one ore two heterojunctions. SH - single heterostructure diode: has two different materials and has both a homojunction and heterojunction. DH - double heterostructure diode: formed with three materials and two heterojunctions. After many early efforts that used homojunctions or single heterostructure, the advent of the DH structure made the diode laser truly practical for the first time.

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Attached Files Available for Download

BASIC SEMICONDUCTOR LUMINESCENT DIODE STRUCTURES .pdf (1.12 MB, 25 views)

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