XRD Analysis in IIT Bombay - 2017-2018 StudyChaCha

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Old December 5th, 2017, 05:22 PM
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Default XRD Analysis in IIT Bombay

Hi I would like to have the information about Single Crystal X-Ray Diffraction Facility as well as the details of the X ray diffraction analysis in Chemical Engineering laboratory?
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Old December 6th, 2017, 09:34 AM
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Default Re: XRD Analysis in IIT Bombay

Single Crystal X-Ray Diffraction Facility conducts Molecular structures of natural and inorganic mixes can be set up by the single gem x-beam diffraction strategy. The single gem x-beam diffraction office is situated in the TCS Building at the Institute. The facility has been supported by the Department of Science and Technology (DST) for structure-reactivity relationship thinks about.

The instrumentation comprises of a Nonius MACH 3 programmed diffractometer with low temperature office and proper computational help for investigation of information and finish structure assurance.

Perceived as a National Facility, it is accessible for use by scholastic/examine establishments and industry for a charge. Moreover, the DST has authorized a venture under which a moment instrument, a best in class CCD diffractometer will be included and introduced before the finish of year 2005.

X ray diffraction analysis

Droplet-phase synthesis of nanoparticle aerosol lipid matrices with controlled properties

Publication Type
Journal Article

Year of Publication
2011

Authors
Pawar, A.A.; Venkataraman, C.

Journal Title
Aerosol Science and Technology

Volume
45

Issue
7

Pages
801 810

Journal Date
2011///

Key Words
Aerodynamic diameters; Aerosol synthesis; Cascade impactors; Controlled properties; Crystallinities; Degree of crystallinity; Drug delivery applications; Drug loading capacity; Evaporation rate; Geometric standard deviations; High pressure homogenization;

Notes

Export Date:
5 July 2011Source: Scopus

DOI
10.1080/02786826.2011.565089

Citation Key
3190

Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures

Publication Type
Journal Article

Year of Publication
2010

Authors
Adhikary, S.; Halder, N.; Chakrabarti, S.; Majumdar, S.; Ray, S.K.; Herrera, M.; Bonds, M.; Browning, N.D.

Journal Title
Journal of Crystal Growth

Volume
312

Issue
5

Pages
724 - 729

Journal Date
2010///

Key Words
A1. Nanostructure; A3.Molecular beam epitaxy; A3.Quantum dots; B2.Semiconducting III-V materials; A1. Nanostructure; B2.Semiconducting III-V materials; Capping layer; Capping thickness; Compressive strain; Defect-free; GaAs; Heterostructures; High-resolut

Export Date:
5 July 2011Source: Scopus

DOI
10.1016/j.jcrysgro.2009.11.067

Citation Key
3173

Contact:

Prof P Mathur, Chemistry Dept (mathur@iitb.ac.in),
Prof G K Lahiri, Chemistry Dept (lahiri@iitb.ac.in),
Head, Chemistry Dept (head.chem.@iitb.ac.in)
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